Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
APT60DQ100BGDIODE GEN PURP 1KV 60A TO247 |
7,047 | 2.26 |
FFQ |
![]() Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 255 ns | 100 µA @ 1000 V | 1000 V | 60A | -55°C ~ 175°C | 3 V @ 60 A | |||
![]() |
APT30S20BGDIODE SCHOTTKY 200V 45A TO247 |
9,320 | 2.52 |
FFQ |
![]() Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 55 ns | 500 µA @ 200 V | 200 V | 45A | -55°C ~ 150°C | 850 mV @ 30 A | |||
![]() |
APT60D40BGDIODE GEN PURP 400V 60A TO247 |
7,561 | 2.99 |
FFQ |
![]() Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 250 µA @ 400 V | 400 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | |||
|
1N5614DIODE GEN PURP 200V 1A AXIAL |
8,699 | 3.63 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |||
|
1N3611DIODE GEN PURP 200V 1A AXIAL |
6,278 | 4.11 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |||
|
JAN1N5617DIODE GEN PURP 400V 1A AXIAL |
9,013 | 4.30 |
FFQ |
![]() Datasheet |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | ||
![]() |
APT60D100BGDIODE GEN PURP 1KV 60A TO247 |
6,493 | 4.98 |
FFQ |
![]() Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 280 ns | 250 µA @ 1000 V | 1000 V | 60A | -55°C ~ 175°C | 2.5 V @ 60 A | |||
|
CDLL5819DIODE SCHOTTKY 45V 1A DO213AB |
7,482 | 5.74 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 50 µA @ 45 V | 45 V | 1A | -65°C ~ 125°C | 490 mV @ 1 A | |||
|
1N5554DIODE GEN PURP 1KV 3A AXIAL |
8,662 | 7.89 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |||
![]() |
1N5802USDIODE GEN PURP 50V 1A D5A |
9,037 | 8.42 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | |||
![]() |
MSC050SDA120BDIODE SCHOTTKY 1200V TO-247 |
4,513 | 14.87 |
FFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 246pF @ 400V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 109A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |||
![]() |
MSC030SDA070BDIODE SCHOTTKY 700V TO-247 |
6,917 | 6.23 |
FFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A | |||
|
1N5553DIODE GEN PURP 800V 3A AXIAL |
6,981 | 6.37 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |||
|
CDLL5195DIODE GEN PURP 180V 200MA DO213 |
8,260 | 7.49 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 180 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |||
|
MSC030SDA120KUNRLS, FG, GEN2, SIC SBD, TO-220 |
7,438 | 9.07 |
FFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 30A (DC) | -55°C ~ 175°C | - | |||
|
MSC030SDA120SUNRLS, FG, GEN2, SIC SBD, TO-268 |
4,923 | 10.22 |
FFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | - | 1200 V | 30A (DC) | - | - | |||
![]() |
1N6663USDIODE GEN PURP 600V 500MA D5A |
1,340 | 18.66 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 600 V | 600 V | 500mA (DC) | -65°C ~ 175°C | 1 V @ 400 mA | |||
|
MSC050SDA070SGEN2 SIC SBD 700V 50A D3PAK |
2,772 | 10.63 |
FFQ |
![]() Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2034pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 88A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |||
|
UES1103DIODE GEN PURP 150V 2.5A AXIAL |
2,791 | 18.45 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | 175°C (Max) | 975 mV @ 2 A | |||
![]() |
UES1303DIODE GEN PURP 150V 6A AXIAL |
2,948 | 26.70 |
FFQ |
![]() Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 150 V | 150 V | 6A | 175°C (Max) | 925 mV @ 6 A |