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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR505 A0G

SR505 A0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

12,894 0.00
- +

FFQ

SR505 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL M2G

S1DL M2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

14,479 0.00
- +

FFQ

S1DL M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF31GHB0G

SF31GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

13,710 0.00
- +

FFQ

SF31GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1001GHC0G

SF1001GHC0G

DIODE GEN PURP 50V 10A TO220AB

Taiwan Semiconductor Corporation

10,116 0.00
- +

FFQ

SF1001GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29L M2G

SS29L M2G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

14,451 0.00
- +

FFQ

SS29L M2G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1B A0G

UF1B A0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

11,907 0.00
- +

FFQ

UF1B A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SR505HA0G

SR505HA0G

DIODE SCHOTTKY 50V 5A DO201AD

Taiwan Semiconductor Corporation

11,182 0.00
- +

FFQ

SR505HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DL MHG

S1DL MHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

10,189 0.00
- +

FFQ

S1DL MHG

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF32G B0G

SF32G B0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

12,400 0.00
- +

FFQ

SF32G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1002G C0G

SF1002G C0G

DIODE GEN PURP 100V 10A TO220AB

Taiwan Semiconductor Corporation

11,434 0.00
- +

FFQ

SF1002G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29L MHG

SS29L MHG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

14,970 0.00
- +

FFQ

SS29L MHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1BHA0G

UF1BHA0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

10,549 0.00
- +

FFQ

UF1BHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SR506HA0G

SR506HA0G

DIODE SCHOTTKY 60V 5A DO201AD

Taiwan Semiconductor Corporation

12,835 0.00
- +

FFQ

SR506HA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DLHM2G

S1DLHM2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

12,530 0.00
- +

FFQ

S1DLHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF32GHB0G

SF32GHB0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

14,144 0.00
- +

FFQ

SF32GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1002GHC0G

SF1002GHC0G

DIODE GEN PURP 100V 10A TO220AB

Taiwan Semiconductor Corporation

13,130 0.00
- +

FFQ

SF1002GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29LHM2G

SS29LHM2G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

13,221 0.00
- +

FFQ

SS29LHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1D A0G

UF1D A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

11,715 0.00
- +

FFQ

UF1D A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SR509 A0G

SR509 A0G

DIODE SCHOTTKY 90V 5A DO201AD

Taiwan Semiconductor Corporation

13,913 0.00
- +

FFQ

SR509 A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1DLHMHG

S1DLHMHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

14,418 0.00
- +

FFQ

S1DLHMHG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
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