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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SRA890HC0G

SRA890HC0G

DIODE SCHOTTKY 90V 8A TO220AC

Taiwan Semiconductor Corporation

14,931 0.00
- +

FFQ

SRA890HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A -55°C ~ 150°C 850 mV @ 8 A
UG06C A1G

UG06C A1G

DIODE GEN PURP 150V 600MA TS-1

Taiwan Semiconductor Corporation

14,514 0.00
- +

FFQ

UG06C A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRAF10100 C0G

SRAF10100 C0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation

14,694 0.00
- +

FFQ

SRAF10100 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
UG06CHA1G

UG06CHA1G

DIODE GEN PURP 150V 600MA TS-1

Taiwan Semiconductor Corporation

10,524 0.00
- +

FFQ

UG06CHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRAF10100HC0G

SRAF10100HC0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation

13,356 0.00
- +

FFQ

SRAF10100HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
UG06D A1G

UG06D A1G

DIODE GEN PURP 200V 600MA TS-1

Taiwan Semiconductor Corporation

11,750 0.00
- +

FFQ

UG06D A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 200 V 200 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRAF10150 C0G

SRAF10150 C0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

11,370 0.00
- +

FFQ

SRAF10150 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 950 mV @ 10 A
UG06DHA1G

UG06DHA1G

DIODE GEN PURP 200V 600MA TS-1

Taiwan Semiconductor Corporation

14,554 0.00
- +

FFQ

UG06DHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 200 V 200 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRAF10150HC0G

SRAF10150HC0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation

13,102 0.00
- +

FFQ

SRAF10150HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 950 mV @ 10 A
1N5391G A0G

1N5391G A0G

DIODE GEN PURP 50V 1.5A DO204AC

Taiwan Semiconductor Corporation

14,766 0.00
- +

FFQ

1N5391G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SRAF1020 C0G

SRAF1020 C0G

DIODE SCHOTTKY 20V 10A ITO220AC

Taiwan Semiconductor Corporation

11,618 0.00
- +

FFQ

SRAF1020 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5391GHA0G

1N5391GHA0G

DIODE GEN PURP 50V 1.5A DO204AC

Taiwan Semiconductor Corporation

12,691 0.00
- +

FFQ

1N5391GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SRAF1020HC0G

SRAF1020HC0G

DIODE SCHOTTKY 20V 10A ITO220AC

Taiwan Semiconductor Corporation

11,379 0.00
- +

FFQ

SRAF1020HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5392G A0G

1N5392G A0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

13,077 0.00
- +

FFQ

1N5392G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SRAF1030 C0G

SRAF1030 C0G

DIODE SCHOTTKY 30V 10A ITO220AC

Taiwan Semiconductor Corporation

14,160 0.00
- +

FFQ

SRAF1030 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5392GHA0G

1N5392GHA0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

13,898 0.00
- +

FFQ

1N5392GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SRAF1030HC0G

SRAF1030HC0G

DIODE SCHOTTKY 30V 10A ITO220AC

Taiwan Semiconductor Corporation

11,260 0.00
- +

FFQ

SRAF1030HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5393G A0G

1N5393G A0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

10,185 0.00
- +

FFQ

1N5393G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1040 C0G

SRAF1040 C0G

DIODE SCHOTTKY 40V 10A ITO220AC

Taiwan Semiconductor Corporation

10,323 0.00
- +

FFQ

SRAF1040 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5393GHA0G

1N5393GHA0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

11,405 0.00
- +

FFQ

1N5393GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
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