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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SRA16100HC0G

SRA16100HC0G

DIODE SCHOTTKY 100V 16A TO220AC

Taiwan Semiconductor Corporation

10,294 0.00
- +

FFQ

SRA16100HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 16A -55°C ~ 150°C 920 mV @ 16 A
1N4001G B0G

1N4001G B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

13,746 0.00
- +

FFQ

1N4001G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1620 C0G

SRA1620 C0G

DIODE SCHOTTKY 20V 16A TO220AC

Taiwan Semiconductor Corporation

14,465 0.00
- +

FFQ

SRA1620 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4001GHB0G

1N4001GHB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

11,310 0.00
- +

FFQ

1N4001GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1620HC0G

SRA1620HC0G

DIODE SCHOTTKY 20V 16A TO220AC

Taiwan Semiconductor Corporation

14,710 0.00
- +

FFQ

SRA1620HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4002G B0G

1N4002G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

13,945 0.00
- +

FFQ

1N4002G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1630 C0G

SRA1630 C0G

DIODE SCHOTTKY 30V 16A TO220AC

Taiwan Semiconductor Corporation

10,649 0.00
- +

FFQ

SRA1630 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4002GHB0G

1N4002GHB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

13,991 0.00
- +

FFQ

1N4002GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1630HC0G

SRA1630HC0G

DIODE SCHOTTKY 30V 16A TO220AC

Taiwan Semiconductor Corporation

14,335 0.00
- +

FFQ

SRA1630HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4003G B0G

1N4003G B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

14,585 0.00
- +

FFQ

1N4003G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1640 C0G

SRA1640 C0G

DIODE SCHOTTKY 40V 16A TO220AC

Taiwan Semiconductor Corporation

14,103 0.00
- +

FFQ

SRA1640 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4003GHB0G

1N4003GHB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

10,274 0.00
- +

FFQ

1N4003GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1640HC0G

SRA1640HC0G

DIODE SCHOTTKY 40V 16A TO220AC

Taiwan Semiconductor Corporation

14,968 0.00
- +

FFQ

SRA1640HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 16A -55°C ~ 125°C 550 mV @ 16 A
1N4004G B0G

1N4004G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

11,747 0.00
- +

FFQ

1N4004G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1650 C0G

SRA1650 C0G

DIODE SCHOTTKY 50V 16A TO220AC

Taiwan Semiconductor Corporation

10,929 0.00
- +

FFQ

SRA1650 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4004GHB0G

1N4004GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

13,263 0.00
- +

FFQ

1N4004GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1650HC0G

SRA1650HC0G

DIODE SCHOTTKY 50V 16A TO220AC

Taiwan Semiconductor Corporation

14,651 0.00
- +

FFQ

SRA1650HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4005G B0G

1N4005G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

14,385 0.00
- +

FFQ

1N4005G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
SRA1660 C0G

SRA1660 C0G

DIODE SCHOTTKY 60V 16A TO220AC

Taiwan Semiconductor Corporation

12,206 0.00
- +

FFQ

SRA1660 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 16A -55°C ~ 150°C 700 mV @ 16 A
1N4005GHB0G

1N4005GHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

11,669 0.00
- +

FFQ

1N4005GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
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