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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SFA808GHC0G

SFA808GHC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

10,509 0.00
- +

FFQ

SFA808GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.7 V @ 8 A
SFAF1001G C0G

SFAF1001G C0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

11,808 0.00
- +

FFQ

SFAF1001G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
SFAF1001GHC0G

SFAF1001GHC0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

14,766 0.00
- +

FFQ

SFAF1001GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 975 mV @ 10 A
UF1MHB0G

UF1MHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

14,202 0.00
- +

FFQ

UF1MHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4001 B0G

UF4001 B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

13,164 0.00
- +

FFQ

UF4001 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4001HB0G

UF4001HB0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

12,306 0.00
- +

FFQ

UF4001HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002 B0G

UF4002 B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

10,321 0.00
- +

FFQ

UF4002 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4002HB0G

UF4002HB0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

12,043 0.00
- +

FFQ

UF4002HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003 B0G

UF4003 B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

10,941 0.00
- +

FFQ

UF4003 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4003HB0G

UF4003HB0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

14,488 0.00
- +

FFQ

UF4003HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004 B0G

UF4004 B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

11,804 0.00
- +

FFQ

UF4004 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4004HB0G

UF4004HB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

13,895 0.00
- +

FFQ

UF4004HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
UF4005 B0G

UF4005 B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

12,781 0.00
- +

FFQ

UF4005 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4005HB0G

UF4005HB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

12,226 0.00
- +

FFQ

UF4005HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006 B0G

UF4006 B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

12,787 0.00
- +

FFQ

UF4006 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4006HB0G

UF4006HB0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

12,259 0.00
- +

FFQ

UF4006HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4007 B0G

UF4007 B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

12,893 0.00
- +

FFQ

UF4007 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UF4007HB0G

UF4007HB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

14,636 0.00
- +

FFQ

UF4007HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
UG2D B0G

UG2D B0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

12,053 0.00
- +

FFQ

UG2D B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
UG2DHB0G

UG2DHB0G

DIODE GEN PURP 200V 2A DO204AC

Taiwan Semiconductor Corporation

12,281 0.00
- +

FFQ

UG2DHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
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