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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
HER204G A0G

HER204G A0G

DIODE GEN PURP 300V 2A DO204AC

Taiwan Semiconductor Corporation

10,410 0.00
- +

FFQ

HER204G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 2A -55°C ~ 150°C 1 V @ 2 A
HER205G A0G

HER205G A0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

13,576 0.00
- +

FFQ

HER205G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
HER206G A0G

HER206G A0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

14,261 0.00
- +

FFQ

HER206G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
HER207G A0G

HER207G A0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

13,783 0.00
- +

FFQ

HER207G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.7 V @ 2 A
HER301G A0G

HER301G A0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

13,533 0.00
- +

FFQ

HER301G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
HER302G A0G

HER302G A0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

13,086 0.00
- +

FFQ

HER302G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1 V @ 3 A
HER303G A0G

HER303G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

11,845 0.00
- +

FFQ

HER303G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
HER304G A0G

HER304G A0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation

12,278 0.00
- +

FFQ

HER304G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1 V @ 3 A
HER306G A0G

HER306G A0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

11,683 0.00
- +

FFQ

HER306G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
HER307G A0G

HER307G A0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

11,483 0.00
- +

FFQ

HER307G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
HER601G A0G

HER601G A0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

13,041 0.00
- +

FFQ

HER601G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1 V @ 6 A
HER602G A0G

HER602G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

14,430 0.00
- +

FFQ

HER602G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1 V @ 6 A
HER603G A0G

HER603G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

11,800 0.00
- +

FFQ

HER603G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
HER604G A0G

HER604G A0G

DIODE GEN PURP 300V 6A R-6

Taiwan Semiconductor Corporation

14,329 0.00
- +

FFQ

HER604G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 6A -55°C ~ 150°C 1 V @ 6 A
HER605G A0G

HER605G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

11,059 0.00
- +

FFQ

HER605G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
HER606G A0G

HER606G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

11,168 0.00
- +

FFQ

HER606G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1.7 V @ 6 A
HT11G A0G

HT11G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

12,664 0.00
- +

FFQ

HT11G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1 V @ 1 A
HT12G A0G

HT12G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

10,116 0.00
- +

FFQ

HT12G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
HT13G A0G

HT13G A0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

13,234 0.00
- +

FFQ

HT13G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
HT14G A0G

HT14G A0G

DIODE GEN PURP 300V 1A TS-1

Taiwan Semiconductor Corporation

10,397 0.00
- +

FFQ

HT14G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -55°C ~ 150°C 1 V @ 1 A
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