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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MUR315S R6G

MUR315S R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

13,640 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5402GHB0G

1N5402GHB0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

12,831 0.00
- +

FFQ

1N5402GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5D M6

HS5D M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

13,234 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5404G B0G

1N5404G B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

12,679 0.00
- +

FFQ

1N5404G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
SK52C R7

SK52C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

13,691 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 5A -55°C ~ 150°C 550 mV @ 5 A
1N5404GHB0G

1N5404GHB0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

10,422 0.00
- +

FFQ

1N5404GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
S5B R6G

S5B R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

11,035 0.00
- +

FFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
1N5406G B0G

1N5406G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

13,909 0.00
- +

FFQ

1N5406G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5F R6

HS5F R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

11,442 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5406GHB0G

1N5406GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

10,482 0.00
- +

FFQ

1N5406GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
RS3M R7

RS3M R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

13,087 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5407G B0G

1N5407G B0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

13,989 0.00
- +

FFQ

1N5407G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
ESH3D R6G

ESH3D R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

10,683 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 900 mV @ 3 A
1N5407GHB0G

1N5407GHB0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

11,451 0.00
- +

FFQ

1N5407GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
ES3F M6

ES3F M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

10,206 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5408G B0G

1N5408G B0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

11,679 0.00
- +

FFQ

1N5408G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1 V @ 3 A
S8JC R6G

S8JC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

12,775 0.00
- +

FFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 8A (DC) -55°C ~ 150°C 985 mV @ 8 A
1N5408GHB0G

1N5408GHB0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

13,841 0.00
- +

FFQ

1N5408GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1 V @ 3 A
MUR320S R7

MUR320S R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

10,879 0.00
- +

FFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5817 B0G

1N5817 B0G

DIODE SCHOTTKY 20V 1A DO204AL

Taiwan Semiconductor Corporation

12,874 0.00
- +

FFQ

1N5817 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
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