Transistors - FETs, MOSFETs - RF - COOLTAT INDUSTRIAL (HK) CO.,LIMITED

Производитель. Часть #	Доступность	Цены	Количество	Таблицы данных	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MRFE6VP5150GNR1 FET RF 2CH 133V 230MHZ TO-270 GW NXP USA Inc.	4,298	39.49	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	26.1dB	50 V	-	-	100 mA	150W	133 V
MRFE6VP5600HR5 FET RF 2CH 130V 230MHZ NI1230 NXP USA Inc.	642	144.95	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	25dB	50 V	-	-	100 mA	600W	130 V
BF909AR215 MOSFET N-CH SOT-143R NXP USA Inc.	14,179	0.00	- + FFQ	Datasheet	Bulk	-	Active	MESFET Dual Gate	800MHz	-	-	40mA	2dB	-	-	7 V
BF909A215 MOSFET N-CH SOT-143B NXP USA Inc.	12,423	0.00	- + FFQ	Datasheet	Bulk	-	Active	N-Channel Dual Gate	800MHz	-	-	40mA	2dB	-	-	7 V
CLF1G0035-200PU RF TRANSISTOR NXP USA Inc.	2,954	1.00	- + FFQ		Tray	-	Obsolete	-	-	-	-	-	-	-	-	-
BF1108215 RF MOSFET N-CH SOT143B NXP USA Inc.	8,737	1.00	- + FFQ		Bulk	-	Active	N-Channel	-	-	-	10mA	-	-	-	3 V
MRFX1K80NR5578 RF POWER FIELD-EFFECT TRANSISTOR NXP USA Inc.	9,840	1.00	- + FFQ	Datasheet	Bulk	-	Active	LDMOS (Dual)	1.8MHz ~ 400MHz	24.4dB	65 V	100mA	-	100 mA	1800W	179 V
MRFE6VP5150NR1 RF MOSFET LDMOS DL 50V TO270 NXP USA Inc.	1,252	37.57	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	26.1dB	50 V	-	-	100 mA	150W	133 V
BLF8G10LS-160,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	14,327	0.00	- + FFQ	Datasheet	Tube	-	Active	LDMOS	920MHz ~ 960MHz	19.7dB	30 V	5µA	-	1.1 A	35W	65 V
BLF6G27-75,112 RF TRANSISTOR NXP USA Inc.	3,644	87.57	- + FFQ	Datasheet	Tray	-	Obsolete	LDMOS	-	-	28 V	18A	-	600 mA	9W	65 V
BLF6G15L-250PBRN,1 RF PFET, 3-ELEMENT, L BAND, SILI NXP USA Inc.	12,865	0.00	- + FFQ	Datasheet	Bulk	-	Active	LDMOS	1.47GHz ~ 1.51GHz	18.5dB	28 V	64A	-	1.41 A	60W	65 V
MRF6V12250HR5 FET RF 100V 1.03GHZ NI-780 NXP USA Inc.	486	480.85	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz	20.3dB	50 V	-	-	100 mA	275W	100 V
MMRF1317HR5 TRANS 1030MHZ 1550W PEAK 50V NXP USA Inc.	785	928.01	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.03GHz	18.2dB	50 V	-	-	100 mA	1300W	105 V
MRFX035HR5 TRANS LDMOS 35W 512 MHZ 65V NXP USA Inc.	2,542	76.85	- + FFQ		Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.8MHz ~ 512MHz	24.8dB	65 V	10µA	-	15 mA	35W	179 V
A3G26D055N-2515 RF REFERENCE CIRCUIT 55W 2515MHZ NXP USA Inc.	777	265.62	- + FFQ	Datasheet	Bulk	-	Active	GaN	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V
MMRF1008HR5 FET RF 100V 1.03GHZ NI-780 NXP USA Inc.	957	357.29	- + FFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz	20.3dB	50 V	-	-	100 mA	275W	100 V
A3G26D055N-2110 RF REFERENCE CIRCUIT 25W 2110-22 NXP USA Inc.	887	675.00	- + FFQ	Datasheet	Bulk	-	Active	GaN	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V
A3G26D055N-1805 RF REFERENCE CIRCUIT 25W 1805-18 NXP USA Inc.	508	675.00	- + FFQ	Datasheet	Bulk	-	Active	GaN	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V
CLF1G0035-100,112 RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	9,106	1.00	- + FFQ	Datasheet	Bulk	-	Active	GaN HEMT	3GHz	12dB	50 V	-	-	330 mA	100W	150 V
BLF2425M8LS140112 NOW AMPLEON, BLF2425M8LS140, POW NXP USA Inc.	8,653	1.00	- + FFQ		Bulk	-	Active	LDMOS	2.45GHz	19dB	28 V	-	-	1.3 A	140W	65 V

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