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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MUR305S V7G

MUR305S V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

13,498 0.00
- +

FFQ

MUR305S V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 50 V 50 V 3A -55°C ~ 175°C -
1T3G A1G

1T3G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

14,242 0.00
- +

FFQ

1T3G A1G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
6A05GHA0G

6A05GHA0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

14,129 0.00
- +

FFQ

6A05GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
MUR310S V7G

MUR310S V7G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

10,266 0.00
- +

FFQ

MUR310S V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C -
1T4G A1G

1T4G A1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

12,895 0.00
- +

FFQ

1T4G A1G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
6A100G A0G

6A100G A0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

12,611 0.00
- +

FFQ

6A100G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
MUR315S V7G

MUR315S V7G

DIODE GEN PURP 150V 3A DO214AB

Taiwan Semiconductor Corporation

13,570 0.00
- +

FFQ

MUR315S V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C -
1T5G A1G

1T5G A1G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

14,328 0.00
- +

FFQ

1T5G A1G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1 V @ 1 A
6A100GHA0G

6A100GHA0G

DIODE GEN PURP 6A R-6

Taiwan Semiconductor Corporation

10,112 0.00
- +

FFQ

6A100GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 1000 V 1000 V 6A -55°C ~ 150°C 1 V @ 6 A
MUR340S V7G

MUR340S V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

13,171 0.00
- +

FFQ

MUR340S V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 175°C -
1T6G A1G

1T6G A1G

DIODE GEN PURP 800V 1A TS-1

Taiwan Semiconductor Corporation

14,241 0.00
- +

FFQ

1T6G A1G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
6A10G A0G

6A10G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

12,042 0.00
- +

FFQ

6A10G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
RS3A V6G

RS3A V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

10,642 0.00
- +

FFQ

RS3A V6G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
1T7G A1G

1T7G A1G

DIODE GEN PURP 1A TS-1

Taiwan Semiconductor Corporation

13,815 0.00
- +

FFQ

1T7G A1G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 10pF @ 4V, 1MHz - 5 µA @ 1000 V - 1A -55°C ~ 150°C 1 V @ 1 A
6A10GHA0G

6A10GHA0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

11,721 0.00
- +

FFQ

6A10GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1.1 V @ 6 A
RS3A V7G

RS3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

13,373 0.00
- +

FFQ

RS3A V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T1G A1G

F1T1G A1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

13,606 0.00
- +

FFQ

F1T1G A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A20G A0G

6A20G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

13,160 0.00
- +

FFQ

6A20G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3B V6G

RS3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

12,590 0.00
- +

FFQ

RS3B V6G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
F1T1GHA1G

F1T1GHA1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Corporation

10,782 0.00
- +

FFQ

F1T1GHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
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