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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Фотографии Производитель. Часть # Доступность Цены Количество Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
6A20GHA0G

6A20GHA0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

11,557 0.00
- +

FFQ

6A20GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3D V7G

RS3D V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

12,540 0.00
- +

FFQ

RS3D V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C -
F1T2G A1G

F1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

14,257 0.00
- +

FFQ

F1T2G A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A40G A0G

6A40G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

13,022 0.00
- +

FFQ

6A40G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3G V7G

RS3G V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation

14,113 0.00
- +

FFQ

RS3G V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C -
F1T2GHA1G

F1T2GHA1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation

10,947 0.00
- +

FFQ

F1T2GHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A40GHA0G

6A40GHA0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

10,992 0.00
- +

FFQ

6A40GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3K V7G

RS3K V7G

DIODE GEN PURP 800V 3A DO214AB

Taiwan Semiconductor Corporation

10,318 0.00
- +

FFQ

RS3K V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C -
F1T3G A1G

F1T3G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

12,124 0.00
- +

FFQ

F1T3G A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A60G A0G

6A60G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

12,497 0.00
- +

FFQ

6A60G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3M V7G

RS3M V7G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

13,340 0.00
- +

FFQ

RS3M V7G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 1000 V - 3A -55°C ~ 150°C -
F1T3GHA1G

F1T3GHA1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

10,982 0.00
- +

FFQ

F1T3GHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A60GHA0G

6A60GHA0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation

13,599 0.00
- +

FFQ

6A60GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
S3A V6G

S3A V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

14,548 0.00
- +

FFQ

S3A V6G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T4G A1G

F1T4G A1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

14,534 0.00
- +

FFQ

F1T4G A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A80G A0G

6A80G A0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

10,569 0.00
- +

FFQ

6A80G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
S3A V7G

S3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation

14,580 0.00
- +

FFQ

S3A V7G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T4GHA1G

F1T4GHA1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation

13,131 0.00
- +

FFQ

F1T4GHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A80GHA0G

6A80GHA0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

10,116 0.00
- +

FFQ

6A80GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
S3B V6G

S3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

10,002 0.00
- +

FFQ

S3B V6G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
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